Blog and News
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Nitrogen-polar III-Nitride Resonant Tunneling Diodes!
We report, in Applied Physics Letters, the first demonstration of resonant tunneling diodes grown along the nitrogen-polar direction!
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Fighting Broken Symmetry with Doping!
Our paper on RTD doping engineering has been published in Physical Review Applied!
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The First III-Nitride Tunneling Field-Effect Transistor!
We report the first III-Nitride Tunneling Field-Effect Transistor in Applied Physics Letters!
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A New Book on High-Frequency GaN Electronic Devices!
We have published a new book on High-Frequency GaN Electronic Devices.
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